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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A42
TRANSISTORNPN (c) TO 92
FEATURES Power dissipation PCM : 0.625 W Tamb=25ae(c) Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 300 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(c) 1 DC current gain hFE(c) 2 HFE(c) 3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat)
1.EMITTER
2.BASE
3.COLLECTOR
123
unless
Test
otherwise
MIN
specified(c)
TYP MAX UNIT V V V 0.25 0.1 |I A |I A
conditions
Ic= 100|I AIE=0 Ic= IE= 1 mAIB=0 100|I AIC=0 IE=0 V IC=0
300 300 5
VCB= 200 V VEB= 5
VCE= 10 V, IC= 1 mA VCE= 10V, IC = 10 mA VCE= 10 V, IC=30 mA IC= 20 mA, IB= 2 mA IC= 20m A, VCE=20 V, IB= 2 mA I = 10 mA C
60 80 75 0.2 0.9 50 V V MHz 250
fT
f =30MHz
CLASSIFICATION OF h FE(2)
Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C

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